Flash array implementation with local and global bit lines

ABSTRACT

A flash memory device that can detect short circuits in local and global bit lines. The flash memory device has a plurality of sets of adjacent local bit lines, a plurality of global bit lines and a plurality of select transistors. Each select transistor has a control gate and is coupled between one of the local bit lines in each set of local bit lines and one of the global bit lines. Thus, each local bit line in each set of local bit lines is coupled to a different global bit line. Multiple select lines are used to activate the control gates on the select transistors. Each select line is coupled to the control gates on associated select transistors. The associated select transistors are select transistors that are coupled to the local bit lines in an associated set of local bit lines.

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This is a divisional application of U.S. patent application Ser.No. 10/017,664, titled FLASH ARRAY IMPLEMENTATION WITH LOCAL AND GLOBALBIT, filed Dec. 12, 2001 (pending), which application is assigned to theassignee of the present invention and the entire contents of which areincorporated herein by reference.

TECHNICAL FIELD OF THE INVENTION

[0002] The present invention relates generally to non-volatile memorydevices and in particular the present invention relates to global andlocal bit line designs in synchronous non-volatile flash memory.

BACKGROUND OF THE INVENTION

[0003] Memory devices are typically provided as internal storage areasfor computers. The term “memory” identifies data storage that comes inthe form of integrated circuit chips. There are several different typesof memory, including RAM (random-access memory). RAM is typically usedas main memory in a computer environment. Most RAM is volatile, whichmeans that it requires a steady flow of electricity to maintain itscontents. As soon as the power is turned off, whatever data was in RAMis lost.

[0004] Computers can contain a small amount of read-only memory (ROM)that holds instructions for starting up the computer. An EEPROM(electrically erasable programmable read-only memory) is a special typeof non-volatile ROM that can be erased by exposing it to an electricalcharge. Like other types of ROM, EEPROM is traditionally not as fast asRAM. EEPROM comprise a large number of memory cells having electricallyisolated gates (floating gates). Data is stored in the memory cells inthe form of charge on the floating gates. Charge is transported to orremoved from the floating gates by programming and erase operations,respectively.

[0005] Yet another type of non-volatile memory is a Flash memory. AFlash memory is a type of EEPROM that can be erased and reprogrammed inblocks instead of one byte at a time. Many modern computers have theirbasic I/O system (BIOS) stored on a flash memory chip so that the BIOScan easily be updated when necessary. Such a BIOS is sometimes called aflash BIOS. Flash memory is also popular in modems because it enablesthe modem manufacturer to support new protocols as they becomestandardized.

[0006] A typical Flash memory comprises a memory array that includes alarge number of memory cells arranged in row and column fashion. Each ofthe memory cells includes a floating gate field-effect transistorcapable of holding a charge. The cells are usually grouped into erasableblocks. Each of the memory cells can be electrically programmed in arandom basis by charging its floating gate. The charge can be removedfrom the floating gate using a block erase operation. The data in a cellis determined by the presence or absence of the charge in the floatinggate.

[0007] Semiconductor memories, including Flash memory, are commonlybuilt using multi-layering wiring. These memories typically includehierarchical bit lines that are used to retrieve and write data into andfrom the memory array. The hierarchical bit lines generally includelocal bit lines and global bit lines. During the manufacture of asemiconductor memory on a wafer, shorts can occur between local bitlines as well as between global bit lines rendering the memorydefective.

[0008] For the reasons stated above, and for other reasons stated belowwhich will become apparent to those skilled in the art upon reading andunderstanding the present specification, there is a need in the art forefficiently testing a wafer for shorts in both local bit lines andglobal bit lines.

SUMMARY OF THE INVENTION

[0009] The above-mentioned problems with detecting bit line shorts inmemory devices and other problems are addressed by the present inventionand will be understood by reading and studying the followingspecification.

[0010] In one embodiment, the present invention provides a flash memorydevice that comprises, a plurality of sets of adjacent local bit lines,a plurality of global bit lines and a plurality of select transistors.Each select transistor has a control gate and is coupled between one ofthe local bit lines in each set of local bit lines and one of the globalbit lines. Thus, each local bit line in each set of local bit lines iscoupled to a different global bit line. Multiple select lines are usedto activate the control gates on the select transistors. Each selectline is coupled to the control gates on associated select transistors.The associated select transistors are select transistors that arecoupled to the local bit lines in an associated set of local bit lines.

[0011] In another embodiment, a flash memory device comprises aplurality of sets of adjacent local bit lines, a plurality of global bitlines and a plurality of select transistors. The plurality of selecttransistors each have a control gate and are coupled between theplurality of sets of adjacent local bit lines and the plurality ofglobal bit lines. Moreover, every other local bit line in one of theplurality of sets of local bit lines is coupled to a different one ofthe plurality of global bit lines. A plurality of select lines are usedto activate the control gates on the select transistors. Each selectline is coupled to the control gates on associated select transistors.The associated select transistors are select transistors that arecoupled to every other global bit line.

[0012] In another embodiment, a flash memory device comprises, aplurality of local bit lines that are positioned generally parallel witheach other, a plurality of select transistors and a plurality of globalbit lines. Each select transistor has a control gate. Moreover, eachselect transistor is coupled to an associated one of the plurality oflocal bit line. Each global line is coupled to a pair of associatedselect transistors. The associated pair of select transistors are selecttransistors that are coupled to alternate local bit lines. In addition,the plurality of local bit lines comprise a first local bit line, asecond local bit line, a third local bit and a fourth local bit line. Afirst select line coupled the control gates on the select transistorscoupled to the first and second local bit lines. A second select linecoupled to the select transistors coupled to the third and fourth localbit lines.

[0013] In another embodiment, a flash memory system comprises an arrayof flash memory cells, a plurality of local bit lines, a plurality ofglobal bit lines and a select circuit. The memory cells of the array arearranged in rows and columns. The plurality of local bit lines arepositioned generally parallel with each other and are coupled to anassociated column of the memory array. Each global bit line isselectively coupled to a pair of associated local bit lines. The pair ofassociated local bit lines being the local bit lines that arealternately positioned with respect to each other. The select circuitselectively couples the local bit lines to the global bit lines. Theplurality of local bit lines comprise a first local bit line, a secondlocal bit line, a third local bit and a fourth local bit line. Theselect circuit comprises a select transistor for each local bit line.Each select transistor has a control gate. In addition, the flash memorysystem has a first select line and a second select line. The firstselect line is used to activate the control gates on the first andsecond local bit lines. The second select line is used to activate thecontrol gates on the third and fourth local bit lines.

[0014] In another embodiment, a flash memory system comprises an arrayof flash memory cells, four local bit lines, a pair of global bit lines,a first multiplex circuit and a second multiplex circuit. The array offlash memory cells are arranged in rows and columns. The four local bitlines are positioned generally parallel with each other and comprise afirst, second, third and fourth global bit line. Each local bit line iscoupled to an associated column of flash memory cells. The firstmultiplex circuit is used to selectively couple a pair of associatedlocal bit lines with an associated global bit line. The associated pairof local bit lines are local bit lines that are alternately positionedwith respect to each other. The second multiplex circuit is used toselectively couple the remaining pair of local bit lines to theremaining global bit line. The associated pair of local bit lines arelocal bit lines that are alternately positioned with respect to eachother. The first multiplex circuit includes a pair of selecttransistors.

[0015] One of the select transistors, in this embodiment, is coupledbetween the first local bit line and an associated global bit line. Theother of the select transistor is coupled between the third local bitline and the associated global it line. The second multiplex circuitalso includes a pair of select transistors. One of the selecttransistors is coupled between the second local bit line and anassociated global bit line. The other select transistor is coupledbetween the fourth local bit line and the associated global bit line.The flash memory system also includes a first select line and a secondselect line. The first select line is coupled to the control gates onthe select transistors that are coupled to the first and second localbit lines. The second select line coupled to the control gates on theselect transistors that are coupled to the third and fourth local bitlines. In this embodiment, the array of flash memory cells is positionedbetween the first multiplex circuit and the second multiplex circuit.

[0016] In another embodiment, an integrated select circuit comprises, afirst drain diffusion region, a second drain diffusion region laterallyspaced apart from the first drain diffusion region and a sourcediffusion region laterally spaced between the first drain diffusionregion and the second drain diffusion region. A first local bit line iscoupled to the first drain diffusion region. A second local bit line iscoupled to the second drain diffusion region. In addition, a global bitline is coupled to the source diffusion region. The first draindiffusion region is laterally wider than the second drain diffusionregion such that a third local bit line can traverse between the firstlocal bit line and the second local bit line. In addition, the thirdlocal bit line is generally located above the first drain diffusionregion.

[0017] In another embodiment, a memory device comprising an array ofmemory cells coupled to even and odd local bit lines and selecttransistors. Some of the select transistors are coupled between evenlocal bit lines and even global bit lines. Moreover, the rest of theselect transistors are coupled between the odd local bit lines and theodd global bit lines.

[0018] A method of operating a flash memory including programming amemory array with an alternate bit line stress program, monitoring thelogic states in global bit lines in response to the alternate bit lineprogram, comparing the pattern of logic states in global bit lines witha predetermined pattern and locating local and global bit line shorts inresponse to the monitoring.

[0019] Another method of operating a flash memory including programmingeven columns of addresses of a memory array to a first logic state,programming odd columns of addresses of a memory array to an oppositelogic state, monitoring the output of the memory array and detectinglocal bit line shorts and all global bit line shorts in response to apattern of logic states in the global bit lines.

[0020] Another method of operating a memory system comprising,programming even columns of addresses of a memory array to a first logicstate, programming odd columns of addresses of a memory array to anopposite logic state, activating control gates on select transistors,monitoring logic states in global bit lines and simultaneouslydetermining short circuits in local and global bit lines in response toa pattern of logic states in the global bit lines.

[0021] A method of operating an integrated circuit memory comprising,selectively coupling odd local bit lines to odd global bit lines andselectively coupling even local bit lines to even global bit lines.

[0022] A method of conducting an alternative bit line stress on a flashmemory. The method comprising, applying activation signals to selecttransistors to selectively couple global bit lines to associated localbit lines, wherein adjacent local bit lines are selectively coupled todifferent global bit lines and applying potential voltage differencesacross adjacent global bit lines.

[0023] Another method of conducting an alternative bit line stress on aflash memory. The method comprising, selectively coupling a first localbit line to a first global bit line, selectively coupling a second localbit line to a second global bit line, selectively coupling a third localbit line to the first global bit line, selectively coupling a fourthlocal bit line to the second global bit line and applying a voltagepotential across the first and second global bit lines.

BRIEF DESCRIPTION OF THE DRAWINGS

[0024]FIGS. 1 and 1A are illustrations of the local and global bit linedesign of one embodiment of the present invention.

[0025]FIGS. 2 and 2A are illustrations of a prior art local and globalbit line design.

[0026]FIG. 3 is a plan view of one embodiment of the present invention.

[0027]FIG. 4 is a cross-sectional view of the first active area of anembodiment of the present invention.

[0028]FIG. 5 is a cross sectional view of a second active area of anembodiment of the present invention.

[0029]FIG. 6 is an illustration of another embodiment of the presentinvention using two multiplex circuits.

[0030]FIG. 7 is an illustration of an embodiment having multiple sets oflocal and global bit lines and two select lines of the presentinvention.

[0031]FIG. 8 is an illustration of another embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

[0032] In the following detailed description of the invention, referenceis made to the accompanying drawings that form a part hereof, and inwhich is shown, by way of illustration, specific embodiments in whichthe invention may be practiced. In the drawings, like numerals describesubstantially similar components throughout the several views. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the invention. Other embodiments may be utilizedand structural, logical, and electrical changes may be made withoutdeparting from the scope of the present invention. The terms wafer andsubstrate used in the following description include any structure havingan exposed surface with which to form the integrated circuit (IC)structure of the invention. The term substrate is understood to includesemiconductor wafers. The term substrate is also used to refer tosemiconductor structures during processing, and may include other layersthat have been fabricated thereupon. Both wafer and substrate includedoped and undoped semiconductors, epitaxial semiconductor layerssupported by a base semiconductor or insulator, as well as othersemiconductor structures well known to one skilled in the art. The termconductor is understood to include semiconductors, and the terminsulator is defined to include any material that is less electricallyconductive than the materials referred to as conductors. The followingdetailed description is, therefore, not to be taken in a limiting sense,and the scope of the present invention is defined only by the appendedclaims, along with the full scope of equivalents to which such claimsare entitled.

[0033] A semiconductor memory having local and global bit lines may bemanufactured so that local bit lines are located on a different metallevel than global bit lines. In a semiconductor memory having this typeof architecture, the local bit lines are coupled to columns of memorycells in a memory array and the global bit lines are coupled to thelocal bit lines to provide bi-directional data communication. Generally,multiple select transistors are used to couple the local bit lines tothe global bit lines. The select transistors form a multiplex circuit orselect circuit that allows each global line to carry the signals of twoor more local bit lines. During the manufacture of a wafer that containslocal and global data lines, shorts can occur. If a short occurs, faultydata could be read into or read from the memory.

[0034] Generally, local and global bit lines are tested for shortcircuits by the use of checkerboard test programs. A checkerboardprogram can also be referred to alternate bit line program. Acheckerboard test program detects short circuits by programming thecells in a memory array into certain patterns and then verifying thepatterns in the global bit lines. Due to the positioning of local andglobal bit lines in the prior art, the use of a single checkerboardprogram to catch shorts in both the local and global bit lines is notpossible.

[0035] For example, a typical embodiment of local and global bit linearchitecture in the prior art is illustrated in FIG. 2. The prior art isillustrated having a first local bit line 20, a second local bit line22, a third local bit line 24 and a fourth local bit line 26. The localbit lines 20, 22, 24 and 26 are positioned generally parallel with eachother, ascending sequentially from the first local bit line 20 to thefourth local bit line 26. The prior art also includes a first selecttransistor 30, a second select transistor 32, a third select transistor34 and a fourth select transistor 36. The select transistors form amultiplex circuit 21. As illustrated, the multiplex circuit 21 ispositioned at one end of a memory array 23.

[0036] In the prior art, the first select transistor has a first controlgate 31, the second transistor has a second control gate 33, the thirdtransistor has a third control gate 35 and the fourth transistor has afourth control gate 37. The circuit also includes a first global bitline 40, a second global bit line 42 as well as a first select line 50and a second select line 52. The first select transistor 30 is coupledbetween the first local bit line 20 and the first global bit line 40.The first control gate 31 is coupled to the first select line 50. Thesecond select transistor 32 is coupled between the second local bit line22 and the first global bit line 40. The second control gate 33 iscoupled to the second select line 52. Thus, the state of the first localbit line 20 is passed to the first global bit line 40 if the firstselect line 50 is activated. Moreover, the state of the second localline 22 is passed to the first global bit line 40 if the second selectline 52 is activated.

[0037] The third select transistor 34 is coupled between the third localbit line 24 and the second global bit line 42. The third control gate 35is coupled to the first select line 50. The fourth select transistor 36is coupled between the fourth local date line 26 and the second globaldata line 42. The fourth control gate 37 is coupled to second selectline 52. Thus, the state of the third local bit line 24 is passed to thesecond global bit line 42 if the first select line 50 is activated.Moreover, the state of the fourth local line 26 is passed to the secondglobal bit line 42 if the second select line 52 is activated. It will beunderstood in the art that while only four local bits lines 20, 22, 24,and 26 and one multiplexer 21 are shown in FIG. 2, a memory arrayactually comprises many such bit lines and multiplexer circuits.

[0038] In a typical prior art, this type of memory is tested for bitline shorts by, first, starting from a blank field (all memory cells areconducting, or are said to be “on” or at a “high” state), thenprogramming cells alternatively, to obtain the so-called “checkerboard”pattern, then reading this pattern to ensure its correctness. Thisyields an array with alternating “on” and “off” cells. Off cells can bereferred to cells in a programmed or “low” state.

[0039] If two local bit lines are shorted together (for example bitlines 20 and 22 of FIG. 2), as bit line 20 is accessed for programming,the programming voltage will also reach, through the short, the adjacentbit line 22. Accordingly, memory cells coupled to bit line 20 and bitline 22 will be affected and possibly programmed. That is, the cellintended to be programmed, which is coupled to bit line 20, will beprogrammed (in an “off” or “low” state) and the cell coupled to bit line22 will also be programmed (in an “off” or “low” state). In thisexample, had there not been short between the two bit lines 20 and 22,the cell coupled to bit line 22 would not be programmed. This type ofbit line to bit line short is discovered with the “checkerboard” patternwith prior art architecture.

[0040] However, if the short is not on a local bit line itself butbetween global bit lines, the prior art architecture does not allow forits detection with a checkerboard pattern. For example, if a short 41 isbetween global bit lines 40 and 42 (as illustrated in FIG. 2A), when acell coupled to bit line 20 is programmed short 41 will cause a cellcoupled to bit line 24 to also be programmed. Since, the cell coupled tobit line 24 would be next to be programmed anyways to achieve thecheckerboard pattern, short 41 will not be detected in the checkerboardpattern. That is, a checkerboard pattern of “on”, “off”, “on”, “off”cells will still be read.

[0041] It will be appreciated that a similar result will happen duringoperations where the conductivity of each cell matters, such in a readoperation. For example, if an “off” cell is read that is coupled to abit line that is shorted to another bit line that is in turn coupled toa cell that is “on,” the read operation will yield an “on” cell result.

[0042] In the present invention, the same checkerboard pattern ofalternating “on” and “off” cells are used to determine shorts. However,with the architecture of the embodiments of the present invention, localbit line shorts as well as global bit line shorts can be detected. Anembodiment of the present invention is illustrated in FIG. 1. Referringto FIG. 1A, a global short 81 is illustrated in the embodiment ofFIG. 1. As illustrated, if global bit lines 80 and 82 have a short 81, aprogrammed cell coupled to local bit line 60 would also program a cellcoupled to bit line 62. The cell coupled to bit line 62 which shouldhave been “on” in the checkerboard pattern will become “off” as theresult of short 81. Accordingly, global line short 81 will be detectedin the checkerboard pattern. The pattern will be “off”, “off”, “off”,“off” memory cells. Accordingly, one benefit of the present invention isthat all global bit line shorts can be detected by storing a singlecheckerboard pattern in the memory cells and then reading the memorycells.

[0043] Referring back to FIG. 1, this embodiment of the presentinvention includes a first local bit line 60 (X1), a second local bitline 62 (X2), a third local bit line 64 (X3) and a fourth local bit line68 (X4). The local bit lines 60, 62, 64 and 68 are positioned generallyparallel with each other ascending sequentially from the first local bitline 60 to the fourth local bit line 68. This embodiment also includes afirst global bit line 80 (Y1) and a second global bit line 82 (Y2). Inaddition, the embodiment further includes a first select transistor 70,a second select transistor 72, a third select transistor 74 and a fourthselect transistor 76. The select transistors form a multiplex circuit 61or select circuit. The multiplex circuit 61 is positioned at one end ofthe memory array 63 as illustrated in FIG. 1.

[0044] The first select transistor 70 is coupled between the first localbit line 60 and the first global line 80. The second select transistor72 is coupled between the second local bit line 62 and the second globalbit line 82. The third select transistor 74 is coupled between the thirdlocal bit line 64 and the first global bit line 80. Moreover, the fourthselect transistor 76 is coupled between the fourth local bit line 68 andthe second global bit line.

[0045] In addition, the first transistor 70 has a first control gate 71,the second transistor 72 has a second control gate 73, the thirdtransistor 74 has a third control gate 75 and the fourth transistor 76has a 77 fourth control gate. A first select line 90 (Z1) and a secondselect line 92 (Z2) are used to activate control gates 71, 73, 75 and77. The first select line 90 is coupled to the first control gate 71 andthe second control gate 73. The second select line 92 is coupled to thethird control gate 75 and the fourth control gate 77. Thus, when thefirst select line 60 is activated, the state of the first select line 60is passed to the first global bit line 80 and the state of the secondselect line 62 is passed to the second global bit line 82. Moreover,when the second select line 92 is activated the state of the third localbit line 64 is passed to the first global bit line 80 and the state ofthe fourth local bit line 68 is passed to the second global bit line 82.

[0046] Another advantage of the embodiments of the present inventionrelate to a mode called “alternative bit line stress.” This mode appliesa voltage, or stress, across bit lines in order to detect possibleleakage, oxide defects or other processing defects between bit lines.Referring to FIG. 2, in the prior art, a potential voltage differencecan be applied to global bit lines 40 and 42 with activation signals on50 and 52, resulting in a voltage difference between local bit lines 22and 24, and 26 and a next adjacent bit line in an adjacent group of bitlines (not shown). However, with the architecture of the prior art thereis no voltage difference between bit lines 20 and 22 or 24 and 26.Accordingly, only a partial bit line to bit line voltage stress can beapplied.

[0047] Referring to FIG. 1, with the present invention, when a potentialvoltage difference is applied across global bit lines 80 and 82 withactivation signals on 90 and 92, the voltage applied across 60 and 62,62 and 64, 64 and 68, and 68 and a next bit line in an adjacent group ofbit lines (not shown) will be different. This configuration provides fora complete, bit line to bite, voltage stress.

[0048] One possible physical layout of this embodiment is illustrated inthe plan view of FIG. 3. As illustrated, the first local bit line 60,the third local bit line 64 and the first global bit line 80 are coupledto active area 94. Active area 94 includes the first select transistor70 and the third select transistor 74, as illustrated in FIG. 4. FIG. 4is a cross-sectional view of active area 94. The scale and spacing ofFIG. 4 is not intended to be accurate, and is a simplified illustrationto convey to those in the art the relevant elements of the embodiment.As illustrated, the first local bit line 60 is coupled to a first draindiffusion region 150 by contact 81, the first global bit line 80 iscoupled to a source diffusion region 152 by contact 83 and the thirdlocal bit line 64 is coupled to a second drain diffusion area 154 bycontact 85. The first control gate 71 is coupled to a first channelregion 151 and the first select line 90 is coupled to the first controlgate 71. The third control gate 75 is coupled to a second channel region153 and the second select line 92 is coupled to the third control gate75. As illustrated in FIG. 4, the first global bit line 80 is formed inmetal layer that is a predetermined distance from a metal layer uponwhich the first and third local bit lines 60 and 64 are formed.

[0049] As illustrated in FIG. 3, the second local bit line 62, thefourth local bit line 68 and the second global bit line 82 are coupledto active area 96. Active area 96 includes the second select transistor73 and the fourth select transistor 76. FIG. 5 represents across-sectional view of the active area 96. The scale and spacing ofFIG. 5 is not intended to be accurate, and is a simplified illustrationto convey to those in the art the relevant elements of the embodiment.The second local bit line 62 is coupled to a first drain diffusionregion 140 by contact 91, the second global bit line 82 is coupled to asource diffusion region 142 by contact 93 and the fourth local bit line68 is coupled to a second drain diffusion region 144 by contact 95. Asillustrated in FIG. 5, the area of the first drain diffusion region 140is widened to allow the third local bit line 64 to be positioned betweenthe second local bit line 62 and the second global bit line 82.Moreover, as illustrated, local bit line 64 is not coupled to the sourcediffusion region 140. FIG. 5 also illustrates the positioning of thefirst global bit line 80 with relation to the second local bit line 62.The first global bit line 80 is formed in a same metal layer as thesecond global bit line 82.

[0050] In addition, the second control gate 73 in active area 96 iscoupled to a first channel region 141. The first channel region 141 islocated between the first drain diffusion region 140 and the sourcediffusion region 142. The first select line 90 is coupled to the secondcontrol gate 73. The fourth control gate 77 is coupled to a secondchannel region 143. The second channel region 143 is located between thesource diffusion region 142 and the second drain diffusion region 144.The second select line 92 is coupled to the fourth control gate 77.

[0051] In another embodiment, the multiplex circuit, or select circuit,is split into a first multiplex circuit 101 and a second multiplexcircuit 103 as illustrated in FIG. 6. In this embodiment, a memory array105 is located between the first multiplex circuit 101 and the secondmultiplex circuit 103. As illustrated, the embodiment includes a firstlocal bit line 100 (X1), a second local bit line 102 (X2), a third localbit line 104 (X3) and a fourth local bit line 106 (X4). The local bitlines 100, 102, 104 and 106 are positioned generally parallel with eachother ascending sequentially from the first local bit line 100 to thefourth local bit line 106. This embodiment also includes a first selecttransistor 120, a second select transistor 122, a third selecttransistor 124 and a fourth select transistor 126. The first multiplexcircuit 101 includes the first select transistor 120 and the thirdselect transistor 120. The second multiplex circuit 103 includes thesecond select transistor 122 and the fourth select transistor 126. Inaddition, this embodiment further includes a first global bit line 110(Y1) and a second global bit line 112 (Y2).

[0052] The first select transistor 120 is coupled between the firstlocal bit line 100 and the first global bit line 110. The second selecttransistor 122 is coupled between the second local bit line 102 and thesecond global bit line 112. The third select transistor 124 is coupledbetween the third local bit line 104 and the first global bit line 110.Moreover, the fourth select transistor 126 is coupled between the fourthlocal bit line 106 and the second global bit line 112. In addition, thefirst select transistor 120 has a first control gate 121, the secondselect transistor 122 has a second control gate 123, the third selecttransistor 124 has a third control gate 125 and the fourth selecttransistor 126 has a fourth control gate 127. A first select line 130(Z1) and a second select line 132 (Z2)are used to activate the controlgates 121, 123, 125 and 127. The first select line 130 is coupled to thefirst control gate 121 and the second control gate 123. The secondselect line 132 is coupled to the third control gate 125 and the fourthcontrol gate 127.

[0053] As with the previous embodiment, a pattern of alternating “High”or “Low” states can also be achieved in the global bit lines 110 and 112of this embodiment by the use of an alternate bit line stress program.For example, by placing a “Low” state on local bit line 100, a “High”state on local bit line 102, a “Low” state on local bit line 104 and a“High” state on line 106 an alternate pattern of “Low”, “High”, “Low”,“High” pattern is achieved in the global bit lines. Moreover, thisembodiment also allows shorts between the local bit lines and shortsbetween global bit lines to both be detected in the checkerboardpattern. Thus, only one checkerboard program is needed.

[0054] It will be appreciate by those skilled in the art that theplacement of the select transistors can very with memory designs and thepresent invention is not limited to placing the select transistors inone or more particular areas of the die. Moreover, the previousembodiments of the present invention have been illustrated with onlyfour local bit lines and two global bit lines, it will be appreciate bythose skilled in the art that the number of local bit lines and thenumber of global bit lines can very with memory designs and that thepresent invention is not limited to four local bit lines and two globalbit lines.

[0055] For example, an embodiment using a first and second select lineand multiple sets of four local and two global bit lines is illustratedin FIG. 7. In this embodiment, the number of global bit lines can beexpressed as Y1 through Yn. Moreover, the number of local bit lines canbe expressed as X1 through X2n. In this embodiment sets of foursequentially number local bit lines are coupled to associated pairs ofglobal bit lines. For example, the odd global bit line Y1 is coupled totwo sequentially ascending odd numbered local bit lines X1 and X3 andthe even global bit line Y2 is coupled to two sequentially ascendingeven number local bit lines X2 and X4. The first select line Z1 iscoupled to a control gates on transistors coupled to X1 and X2, X5 andX6, X9 and X10 . . . etc. The second select line Z2 is coupled to acontrol gates on transistors coupled to X3 and X4, X7 and X8, X11 andX12 . . . etc.

[0056] In other embodiments of the present invention, more than twolocal bit lines are coupled to a single global bit line. In theseembodiments, an even number of local bit lines are coupled to eachglobal bit line to ensure that the alternate bit line stress will workas previously described. For example, an embodiment is illustrated inFIG. 8. As illustrated in FIG. 8, local bit lines X1, X5, X9 and X13 areselectively coupled to global bit line Y1, local bit lines X2, X6, X10and X14 are selectively coupled to global bit line Y2, local bit linesX3, X7, X11 and X15 are selectively coupled to global bit line Y3 andlocal bit lines X4, X8, X12 and X16 are selectively coupled to globalbit line Y4. In this embodiment one global bit line is coupled to fourassociated local bit lines. In addition, as illustrated in FIG. 8 and asillustrated in FIG. 1, embodiments of the present invention can bedescribed as coupling odd local bit lines to odd global bit lines andeven local bit line to even global bit lines wherein as, illustrated inFIGS. 1 and 8, the local and global bit lines are positioned essentiallyparallel with each other and are sequentially numbered. For example,referring to FIG. 8, local bit line X1 is coupled to global bit line Y1,local bit line X2 is coupled to global bit line Y2, local bit line X3 iscoupled to global bit line Y3, local bit line X4 is coupled to globalbit line Y4, local bit line X5 is coupled to global bit line Y1 . . .etc.

Conclusion

[0057] A flash memory device that has a global and local bit line designthat enables an alternate bit line stress mode as well as a way todetect short circuits in both the local and global bit lines with asingle alternate bit line program. The flash memory device has aplurality of sets of adjacent local bit lines, a plurality of global bitlines and a plurality of select transistors. Each select transistor hasa control gate and is coupled between one of the local bit lines in eachset of local bit lines and one of the global bit lines. Thus, each localbit line in each set of local bit lines is coupled to a different globalbit line. Multiple select lines are used to activate the control gateson the select transistors. Each select line is coupled to the controlgates on associated select transistors. The associated selecttransistors are select transistors that are coupled to the local bitlines in an associated set of local bit lines.

[0058] Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement, which is calculated to achieve the same purpose,may be substituted for the specific embodiment shown. This applicationis intended to cover any adaptations or variations of the presentinvention. Therefore, it is manifestly intended that this invention belimited only by the claims and the equivalents thereof.

What is claimed:
 1. A method for conducting an alternative bit linestress test on a flash memory device, the method comprising: applyingactivation signals to select transistors to selectively couple globalbit lines to associated local bit lines, wherein adjacent local bitlines are selectively coupled to different global bit lines; andapplying potential voltage differences across adjacent global bit lines.2. The method of claim 1 wherein resulting voltage potentials acrossadjacent local bit lines are different.
 3. A method for conducting analternative bit line stress test on a flash memory device, the methodcomprising: selectively coupling a first local bit line to a firstglobal bit line; selectively coupling a second local bit line to asecond global bit line; selectively coupling a third local bit line tothe first global bit line; selectively coupling a fourth local bit lineto the second global bit line; and applying a voltage potential acrossthe first and second global bit lines.
 4. The method of claim 3 whereinthere is a voltage potential difference across adjacent local bit linesas the result of applying the voltage potential across the first andsecond global bit lines.
 5. The method of claim 3 wherein the local bitlines are sequentially positioned adjacent each other.
 6. The method ofclaim 3 wherein the flash memory device is a floating gate memorydevice.
 7. A method for conducting an alternative bit line stress teston a memory array of a flash memory device, the method comprising:programming a group of memory cells of the flash memory with alternatinglogic states; selectively coupling even local bit lines to a firstglobal bit line; selectively coupling odd local bit lines to a secondglobal bit line; monitoring the first and second global bit lines; andindicating a short condition when a monitored state of either the firstor the second bit lines is different than a state programmed into afirst memory cell of the group of memory cells.
 8. The method of claim 7wherein select transistors are coupled between the local bit lines andthe global bit lines.
 9. The method of claim 7 wherein selectivelycoupling odd local bit lines comprises coupling a first group ofalternating local bit lines to the first global bit line and selectivelycoupling even local bit lines comprises coupling a second group ofalternating local bit lines to the second global bit line.
 10. Themethod of claim 7 wherein selectively coupling odd local bit linescomprises activating a first select transistor that is coupled between afirst even local bit line and a first even global bit line.
 11. Themethod of claim 7 wherein selectively coupling comprises: generating anactivation signal coupled to a control gate of a select transistor; andthe select transistor coupling a first even local bit line to a firsteven global bit line in response to the activation signal.
 12. Themethod of claim 7 wherein selectively coupling comprises: generating aplurality of activation signals, each signal coupled to a differentselect transistor of a plurality of select transistors; and theplurality of select transistors selectively coupling the even local bitlines to the even global bit lines and the odd local bit lines to theodd global bit lines in response to the activation signals.
 13. Themethod of claim 7 wherein the integrated circuit memory is a floatinggate flash memory device.
 14. The method of claim 7 wherein thealternating logic states comprises alternating logic high and lowstates.
 15. The method of claim 14 wherein the memory array is afloating gate memory array and the alternating logical high and lowstates are comprised of a charge and a lack of charge on the floatinggate.